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The IRF540 is a popular N-channel enhancement-mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by International Rectifier (now part of Infineon Technologies). Here are the details:Key Features1. N-channel enhancement-mode: Allows for high current flow when the gate is positively biased.2. Power MOSFET: Designed for high-power applications, such as switching power supplies, motor control, and power amplifiers.3. Low on-resistance (Rds(on)): 44 m? at Vgs = 10 V, reducing power losses and heat generation.4. High current rating: 33 A at 25°C, suitable for high-power applications.5. High voltage rating: 100 V, providing a wide margin for most power supply applications.Specifications1. Drain-source voltage (Vds): 100 V2. Gate-source voltage (Vgs): ±20 V3. Continuous drain current (Id): 33 A at 25°C4. Pulse drain current (Id): 120 A5. On-resistance (Rds(on)): 44 m? at Vgs = 10 V6. Threshold voltage (Vth): 2-4 V7. Operating temperature range: -55°C to 175°C