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Synopsys, IIT develop TCAD model for 5nm FinFET simulation - EE Times India
Synopsys, IIT develop TCAD model for 5nm FinFET simulation - EE Times India
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Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
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