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A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for ...
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for ...
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Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with ...
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High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD ...
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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Diodes Launches First SiC SBDs - EE Times India
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for ...
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LSIC2SD GEN2 SiC Schottky Diodes - Littelfuse | Mouser
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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Virtual Labs
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for ...
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for ...
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Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its ...
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FFSH40120ADN-F085 onsemi | onsemi 1200V 50A, SiC Schottky Diode, 3-Pin ...
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STPSC10065D STMicroelectronics | STMicroelectronics 650V 10A, SiC ...
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect ...
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SiC PiN Diodes - GeneSiC | Mouser
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STPSC40065CWY STMicroelectronics | STMicroelectronics 650V 40A, Dual ...
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Optimizing WBG Devices for High Voltage Applications - EE Times India
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C3D04060A Wolfspeed | Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO ...
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SiC Schottky Diodes – Mouser India
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IDWD10G120C5XKSA1 Infineon | Infineon 1200V 10A, SiC Schottky Diode, 2 ...
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Discrete Semiconductor Kit Identification Guide
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IDD10SG60CXTMA2 Infineon | Infineon 1.8V 10A, SiC Schottky Rectifier ...
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for ...
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A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance
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FFSB0665B onsemi | onsemi 650V 8A, SiC Schottky Diode, 3-Pin D2PAK ...
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FFSH30120A onsemi | onsemi 1200V 46A, SiC Schottky Diode, 2-Pin TO-247 ...
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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor ...
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Is it acceptable to use a body diode between the drain and source ...
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Automotive-Grade Silicon Carbide Power MOSFETs - STMicro | Mouser
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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for ...
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Diode Introduction, Working, and its VI Characteristics - Mango Engineer
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IDH04G65C6XKSA1 Infineon | Infineon 650V 4A, SiC Schottky Diode, 2-Pin ...
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Investigation of Barrier Inhomogeneities and Electronic Transport on Al ...
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Schottky Barrier Diodes - ROHM | Mouser
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STPSC10H12WL STMicroelectronics | STMicroelectronics 1200V 10A, SiC ...
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Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
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C3D10060A Wolfspeed | Wolfspeed 600V 10A, SiC Schottky Diode, 2-Pin TO ...
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CSD01060E-TR Wolfspeed | Wolfspeed 600V 2A, SiC Schottky Diode, 2-Pin ...
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4th Generation SiC Schottky MPS Diodes - GeneSiC | Mouser
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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M7 Diotec Semiconductor | Mouser India
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and ...
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MSC010SDA070K Microchip | Microchip 700V 10A, SiC Schottky Rectifier ...
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650 Silicon-Carbide (SiC) MOSFETs - STMicro | Mouser
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STTH200L06TV1 STMicroelectronics | STMicroelectronics 600V 120A, Dual ...
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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon ...
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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SCS220KE2GC11 ROHM | ROHM 1200V 20A, SiC Schottky Rectifier & Schottky ...
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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Activity: What is Polarity and Why do we care? [Analog Devices Wiki]
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3-2. Comparison between SBDs and pn junction diodes | Toshiba ...
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SMC Diode Solutions Distributor | DigiKey
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Buy G33N50EF Power MOSFET with Fast Body Diode at electronifyindia.com ...
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C6D06065A Wolfspeed | Wolfspeed 650V 6A, SiC Schottky Rectifier ...
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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Activity: What is Polarity and Why do we care? [Analog Devices Wiki]
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Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type ...
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Generation 1.5 SiC Schottky Barrier Diode - Panjit | DigiKey
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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The Significance Intrinsic Body Diodes MOSFETs | DigiKey
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Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass ...
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Lightning Surge TVS SPA Diodes - Littelfuse | Mouser
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Influence of Temperature and Flow Ratio on the Morphology and ...
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Automotive-grade SiC MOSFET portfolio with breakdown voltages up to ...
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FFSM2065B onsemi | onsemi 650V 20A, SiC Schottky Diode, 5-Pin 2P, PQFN ...
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A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation ...
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1N4148 SMD Glass Diode || 1N4148 Zener Diode
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SEELab - 3.0
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Optimization of MOSFET Copper Clip to Enhance Thermal Management Using ...
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